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. 2020 Nov 20;6(47):eabb3095. doi: 10.1126/sciadv.abb3095

Fig. 2. Rabi splitting from a single CQD on SiO2/Si.

Fig. 2

PL spectra from a single CQD on 3-μm SiO2/Si for different collection angles: (A) 0°, (B) 7°, (C) 10.7°, and (D) 21°. The green solid lines are lines fitted by a bi-Gaussian function. (E) Variation in the split PL peak energies from a single CQD on 3-μm SiO2/Si with angle (°).The scattered symbols show the experimental results of spectral peaks. The solid lines are fits to the experimental data by the strong coupling formula. The dotted line is the exciton energy, and the gray line is the F-P mode. (F) Antibunching phenomenon of a single CQD on SiO2/Si. The horizontal dotted line represents the value of 0.5 for the second-order correlation function.