Table 1.

List of variables and descriptions.

Variable	Description
NON-SPIKING
$\overline{U}$	Membrane voltage, state variable
${\stackrel{-}{C}}_{mem}$	Membrane capacitance, constant parameter
Gmem	Membrane conductance/leak conductance, constant parameter
Iapp	Applied current, input variable
$\overline{G}$max	Maximum non-spiking synaptic conductance, constant parameter
$\stackrel{-}{G_s}$	Instantaneous non-spiking synaptic conductance, piecewise linear function of the pre-synaptic neuron's voltage
$\stackrel{-}{E_s}$	Non-spiking synaptic reversal potential, constant parameter
SPIKING
U	Membrane voltage, state variable
θ	Spiking threshold, state variable
Cmem	Membrane capacitance, constant parameter
Gmem	Membrane conductance/leak conductance, constant parameter
Iapp	Applied current, input variable
θ0	Initial spiking threshold, constant parameter
τθ	Spiking threshold time constant, constant parameter
m	Proportionality constant that determines the change in θ relative to U, constant parameter
Gmax	Maximum spiking synaptic conductance, constant parameter
Gs	Instantaneous synaptic conductance, state variable
τs	Synaptic time constant, constant parameter
Es	Spiking synaptic reversal potential, constant parameter