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. 2020 Oct 30;10(11):2175. doi: 10.3390/nano10112175

Figure 1.

Figure 1

Schematic cross-section of the processed GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). A 5 nm-thick SiN and HfO2 layer were employed for Sample-SiN and-HfO2, respectively, as a gate dielectric layer.