Figure 1.

Generic schematic illustration of the sputter-deposition chamber used for collecting data reported in this work. The chamber is equipped with several in situ diagnostics which allow real-time growth monitoring: the wafer curvature set-up is attached at the bottom flange of the chamber and consists of a multiple-beam laser illuminating the substrate at near-normal incidence; the set-up for spectroscopic ellipsometry, operating at an incidence angle of ~70°, consists of a light source, polarizer, and analyzer. The sample holder stage can be fitted with a custom-built four-point probe apparatus to measure the change in electrical resistance during deposition.