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. 2020 Nov 1;7(23):2001760. doi: 10.1002/advs.202001760

Figure 2.

Figure 2

a) EL spectra for devices A–D at the current density of ≈90 mA cm−2. b) J–V, c) L–V, d) EQELPE, and e) operating lifetime curves of devices A–D. f) Performance reproducibility of the device C. The photograph in (a) shows a working device C (with an emission area of 4 mm2 operated under 90 mA cm−2). The inset of (b) demonstrates the device structure based on periodically inserting N layers of MoO3 in CBP, for which N varies from 0 to 3 nm.