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. 2020 Dec 8;10:21434. doi: 10.1038/s41598-020-78326-x

Table 2.

Summary of β-Ga2O3 device performance of present device and other previously reported UV PDs.

Device structure MSM NW network MSM
No Ag 5 nm Ag
Fabrication method Oxidation/vaporization CVD MOCVD
Electrode Cr/Au Au Au
Light of detection (nm) 190–400 290–340 255–260
IPhoto/IDark 4.55@10 V 38.3@10 V 50@10 V 4.67
Year 2019 2016 2015
Reference This work 17 18