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. 2020 Dec 14;10:21870. doi: 10.1038/s41598-020-78767-4

Figure 4.

Figure 4

Schematic of CVD grown monolayer MoS2 FET in (a) ambient and (b) vacuum condition. (c) Comparison of ID–VG at VD = 1.0 V in ambient and in vacuum. (d) Comparison of potentiation and conductance retention at VD = 1.0 V and VG = VThreshold – 0.5 V of MoS2 FET in ambient and in vacuum.