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. 2020 Dec 14;10:21870. doi: 10.1038/s41598-020-78767-4

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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MoS₂ FET as optoelectronic synapse. (a) Optical potentiation by applying 50 light pulses (5 s on/5 s off) at V_D = 1.0 V and electrical depression by applying 50 electrical pulses at the drain of amplitude − 0.1 V and duration 1 s in dark, V_G = − 2 V is maintained throughout. (b) Excitatory post-synaptic current induced PPF index of the optoelectronic device with respect to time interval between two consecutive pulses measured at V_D = 1.0 V and V_G = − 2.0 V. Inset shows transient photocurrent of the device for applying two consecutive light pulses. (c) A schematic showing two connected optoelectronic synaptic devices for the emulation of spike-timing-dependent plasticity and (d) Emulation of spike time dependent plasticity.