Table 4.
Summary of relevant materials reported in the literature for doped/functionalized graphene‐based materials.
|
Material[a] |
Synthesis |
Electrolyte |
Discharge capacity (discharge rate) |
Capacity limitation |
Cycles (discharge rate) |
Ref. |
|---|---|---|---|---|---|---|
|
N‐doped defective GNSs |
annealing of commercial Vor‐X in an open furnace +reduction in NH3 or H2 atmospheres at high temperature |
1 m LiCF3SO3 in TEGDME |
17 400 mAh g−1 (100 mA g−1) |
800 mAh g−1 |
110 (40 A g−1) |
|
|
3D N‐doped graphene nanocages |
hydrothermal treatment with thiourea and GO as precursors and polystyrene particles as templates +freeze‐drying+high‐temperature annealing |
1 m LiTFSI in TEGDME |
10 081 mAh g−1 (200 mA g−1) |
1000 mAh g−1 |
72 (300 mA g−1) |
|
|
S‐GNSs |
CVD in Ni foam catalyst with thiophene as a precursor |
1 m LiTFSI in TEGDME |
10 081 mAh g−1 (200 mA g−1) |
1000 mAh g−1 |
300 (300 mA g−1) |
|
|
N‐,S‐codoped porous carbon/graphene hybrid |
hydrothermal treatment of thiourea and sucrose+KOH activation |
1 m LiTFSI in TEGDME |
11 431 mAh g−1 (100 mA g−1) |
500 mAh g−1 |
100 (500 mA g−1) |
|
|
PEDOT microflower/GNS composites |
surfactant‐assisted polymerization |
0.5 m LiTFSI/0.5 LiNO3 in TEGDME |
– |
1500 mAh g−1 |
150 (400 mA g−1) |
[a] PEDOT=poly(3,4‐ethylenedioxythiophene).