Figure 10.

Optimized optoelectronic properties. a) The calculated bandgap change of T‐ and H‐ZrTe₂ with the increase of pressure.^{[ 201 ]} b) Resistivity as a function of pressure for MoSe₂. c) Bandgap changes versus pressure in various MoS₂ polytypes. d) Pressure‐induced phase transitions in various MoS₂ polytypes. e) Several experimental and calculated critical temperature (T _c) of phosphorus under high pressure. f) Pressure‐dependent UV–vis absorption spectra of 2D Cs₃Sb₂I₉ perovskite. g) The pressure‐dependent bandgap of 2D Cs₃Sb₂I₉, where the inset describes the bandgap Tauc plots at 0 and 20 GPa. h) Optical images of 2D Cs₃Sb₂I₉ under various pressures. i) Pressure‐induced synthesis of 2D CsPbBr₃ perovskite nanoplates. a) Reproduced with permission.^{[ 201 ]} Copyright 2015, Royal Society of Chemistry. b) Reproduced with permission.^{[ 20 ]} Copyright 2015, Springer Nature. c,d) Reproduced with permission.^{[ 18 ]} Copyright 2014, American Chemical Society. e) Reproduced with permission.^{[ 32 ]} Copyright 2017, American Physical Society. f–h) Reproduced with permission.^{[ 43 ]} Copyright 2020, Royal Society of Chemistry. i) Reproduced with permission.^{[ 226 ]} Copyright 2017, Wiley‐VCH.