Table 1.

Critical pressure of metallization or superconducting in common 2D materials

2D material		Metallization critical pressure [GPa]	Superconducting critical pressure [GPa]	Other phases
2D perovskite	(PEA)2PbI4	53.7 ± 8.2[ 39 ]
	(CH3NH3)PbI3	Above 60 (RT)[ 42 ]
	Cs3Bi2I9	28 (338 K)[ 200 ]
2D TMDs	ZrTe2	T‐ZrTe2 ≈ 2 (H‐Zr‐Te2 ≈ 6)[ 201 ]
	1T‐TiSe2		2–4 (1.8 K)[ 191 ]
	WTe2		10.5 (2.8 K);[ 183 ] 4–5 (300 K)[ 184 ]
	WS2	22 (280 K)[ 17 ]
	WSe2	51.7 (RT)[ 202 ]
	ZrS2	5.6–25[ 186 ]	5.6–25 (1.1–1.9 K) or 25–100 (0.3–0.1 K)[ 186 ]
	MoTe2	14.9[ 203 ]
	MoS2	30 (270 K);[ 167 ] 9 (RT)[ 19 ]	90 (3 K)[ 167 ]	Intermediate state: 10–19; semiconducting state: 0–10[ 19 ]
CdI2		62 (240 K)[ 174 ]		35 (270 K)[ 174 ] semiconducting phase
FeCL2		47 (300 K)[ 204 ]
NI2		19 (310 K)[ 205 ]
MgC2			Ambient pressure (15 K)[ 206 ]
BP		1.7, 10[ 207 ]	Above 5 (6–13 K);[ 181 ] above 10 (5–10 K);[ 182 ] 11–30 (4–10.7 K), 15 (6 K)[ 207 ]
MoSe2		40.7–60[ 20 ]		0–40.7 semiconducting phase
CaC2			43 (7.9 K) and 95 (9.8 K)[ 185 ]
CaC6			7.5 (15.1 K)[ 208 ]