Table 2.

Optimized properties under high pressure

Materials	Optoelectronic tunings	Bandgap tuning range	Prospects
2D perovskite	Pressure‐induced amorphization during compression, PL intensity variations such as weakened PL intensity and peak position shifts, enhanced radiative excitonic recombination;[ 39 ] five times PL enhancement;[ 41 ] 150% PL enhancement without sacrificing the carrier lifetime;[ 225 ] six times PL enhancement[ 226 ]	Giant tunability in bandgap including ultrabroad energy tuning of 320 meV;[ 39 ] 2.05–1.36 eV;[ 43 ] 2.65– 2.36 eV;[ 40 ] 2.00–1.92eV;[ 41 ] 2.55–1.78 eV;[ 223 ] 2.053–1.420 eV[ 225 ]	In situ optoelectronic applications or a tuning knob;[ 39 , 43 ] structure and bandgap engineering;[ 40 , 223 ] optoelectronic properties tailoring, energy applications;[ 225 ] improvement in materials‐by‐design applications[ 225 ]
Graphene	Formation of hexagonal diamondene;[ 152 , 227 , 228 ] giant doping of ≈6 × 1013 cm−2[ 229 ]	Bandgap opening (e.g., trilayer graphene (2.5 ± 0.3 eV)[ 230 ] and 100 meV for monolayer graphene[ 229 ])	Development of carbon‐based electronic devices such as transistors or strain sensors
2D TMD	Highly tunable transport properties including the decreased resistivity or enhanced electrical conductivity;[ 17 , 20 , 167 , 202 , 203 , 231 ] enhanced onset of the critical temperature for superconductivity;[ 167 ] enhanced mobility and electron concentrations as well as ionization of impurity levels;[ 231 ] suppression of magnetoresistance, reconstruction of Fermi surface (the decrease of hole and increase of electron ones)[ 183 ]	Bandgap narrowing[ 17 , 20 , 167 , 201 , 202 , 203 ]	Electronic structure and bandgap engineering; energy variable optoelectronic and photovoltaic design; alternative routing of high‐temperature superconductivity;[ 167 ] optoelectronic gain modulation[ 19 ]
vdW heterostructures	Enhanced doping level: 0.4 × 1013–3.2 × 1013 cm−2;[ 37 ] enhanced charging effects in alcohol mixture PTM‐based experiments[ 46 ]		Tuning of electronic and band structures
MgC2	Enhanced electron–phonon coupling[ 206 ]		High temperature and ambient pressure superconductivity[ 206 ]
BP	Higher transition temperature of superconductivity;[ 32 ] increase the pressure range of layered phased phosphorus[ 30 , 31 ] Enhanced superconducting transition temperature;[ 194 ] change the dominant carrier type (a Lifshitz transition), large magnetic resistance effect, and increased effective carrier density[ 181 ]	Bandgap narrowing[ 33 , 181 , 194 ]	Superconducting materials design; BP and correlated materials stabilization; development of superconductivity in elemental phosphorus
Ti3C2Tx MXene	Enhanced electromagnetic interference shielding performance[ 232 ]		Highly efficient EMI shielding applications[ 232 ]
h‐BN	Transformations of superhard materials phase[ 26 ]		Strain‐induced synthesis of superhard materials[ 26 ]