Figure 7.

Typical transfer characteristics of a-IGZO based TFT with oxygen flow rate of (a) 0 sccm, (b) 1 sccm, (c) 3 sccm and (d) 6 sccm. The fixed drain voltage is 1 V, gate voltage sweeping from −1 V to +3 V (the open square with solid line, open circle with dash line, open triangle with dot and open hexagon with dash–dot line represent the transfer characteristics for channel width 500 µm, 800 µm, 1500 µm and 2000 µm, respectively). The effects of (e) OFR and (f) channel width (W) on gate leakage current are presented.