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. 2020 Dec 7;10(12):2450. doi: 10.3390/nano10122450

Figure 8.

Figure 8

Room temperature µPL 300 mm mapping of the energy, intensity, and FWHM for three stacked InAs QDs grown on GaAs/Ge/Si (001) structure for: (a) GS peak; (b) 1ES peak; and (c) 2ES peak. Spectra are acquired at 673 different positions to map entirely the Si 300 mm wafer.