Fig. 3.

a, b Diagram of the fast pickup technique. a Picking up process. b Depositing process [80]. c–e Experiment of bias-induced differential spin injection ($p_{\mathrm{in}}$) and detection ($p_{\mathrm{d}}$) polarizations. c $p_{\mathrm{in}}$ of four contacts, as a function of the DC voltage bias V. d $p_{\mathrm{d}}$ for two different detector contacts, as a function of DC voltage bias V applied across the detector, while the injector bias is fixed at $I_{\mathrm{in}}=+20\mathrm{\mu }\mathrm{A}$. e Schematic diagram of measuring device structure [83]. f Schematic image of the device in which the fluorinated graphene serves as a tunnel barrier [84].

Figures reproduced with permission from Refs. [80, 83, 84]