Fig. 7.

a, b Schematic of Hanle measurement. Non-local spin valve structure. Spin-polarized electrons, generated by FM, diffuse through graphene channel and form pure spin current. When the vertical magnetic field is added, the electron’s spin will process around the field and a classical Hanle signal can be obtained by scanning the magnetic field [15]. c Comparison diagram of the different hBN as a tunnel barrier [125]. d Schematic of flexible graphene spin circuits [142]. e Non-local spin valves structure with BP [154]. f Schematics of silicene FET and its synthesis–transfer–fabrication process, which includes the following key steps: epitaxial growth of silicene on crystallized Ag(111) thin film, in situ Al₂O₃ capping, encapsulated delamination transfer of silicene, and native contact electrons formation to enable back-gated silicene transistors [160].

Figures reproduced with permission from Refs. [15, 125, 142, 154, 160]