Fig. 9.

a Schematic representation with a multilayer MoS₂ ferromagnetic contacts and a MoS₂ spacer [182]. b Hall resistance of the tunneling spin valves based on Fe₃GeTe₂/hBN/Fe₃GeTe₂ heterostructure. The left and right insets are, respectively, an optical microscope image of the device and a schematic of the device cross section [183]. c Schematic of spin filtering effect in graphene. Fcc Fermi surface projections for Co (Ni, Cu) majority and minority spins. For graphene, surfaces of constant energy are centered on the k point [184]. d Schematic of graphene-based magnetologic consisting of a graphene sheet contacted by five ferromagnetic electrons. A/D is the input terminal. M is the output terminal. B/C is the controller (control logic gate type). I_w controls the magnetization direction of the electrode. I_r is used to disturb the magnetization direction of M. I_M is the transient response output current. V_dd is the steady-state input voltage, forming a loop with the ground of B (or M) and C (or M). Defining the magnetization direction “↑” as “1,” “↓” as “0” [15].

Figures reproduced with permission from Refs. [15, 182–184]