Table 1.
Part of the 2D magnetic materials
| 2D material | Tc | Electric properties | Magnetic properties |
|---|---|---|---|
| Cr2Ge2Te6 |
30 K (bilayer) 68 K (bulk) Weak magnetic dependence |
Insulator | Ferromagnetism |
| Cr2Si2Te6 |
33 K (monolayer > bulk) 290 K (under stress) |
Semiconductor | Ferromagnetism |
| Fe3GeTe2 |
205 K (bulk) 150–220 K (Fe occupancy) 300 K (monolayer, gate tune) |
Metal | Ferromagnetism |
| VSe2-1T | 300 K (monolayer) | Metal |
Ferromagnetism (monolayer, controversial) Paramagnetic (bulk) |
| VS2-1T | 300 K (few layers) | Metal |
Ferromagnetism (few layers) Ferromagnetism (monolayer, theoretic) |
| MnSe2-1T | 300 K (monolayer) | Metal |
Ferromagnetism (ultra-thin layer) Antiferromagnetism (bulk) |
| CrI3 |
45 K (monolayer) 61 K (bulk) |
Insulator | Ferromagnetism |
| CrBr3 | 37 K (monolayer) | Insulator | Ferromagnetism |
| ReI3 | 65 K (theoretic) | Half-metal | Ferromagnetism (theoretic) |
| ReBr3 | 390 K (theoretic) | Half-metal | Ferromagnetism (theoretic) |