Table 2.

Development of spin transport research

Year	Structure	${\tau }_{\mathrm{s}}\text{/ns}$	${\lambda }_{\mathrm{s}}/\mathrm{\mu }\text{m}$	T/K	References
2007	SiO2/Si (sub)	0.17	2	300	[52]
2012	SiC (sub)	1.3	0.56	300	[130]
2012	hBN (sub)	0.39	4.5	300	[137]
2014	hBN (sub) and hBN-encapsulated	2	12	300	[140]
2016	hBN (sub) and ML-hBN-encapsulated*	0.18	5.1	300	[141]
2016	hBN (sub) and 2–3L-hBN-encapsulated*	1.86	5.79	300	[72]
2016	Suspension and hBN-encapsulated	12.6	30.5	300	[147]
2019	Flexible substrate	0.25	8	300	[142]
2017	hBN (sub) and hBN-encapsulated*	4	6	100	[154]
2017	SiO2/Si (sub)	46	0.24	12	[161]

Bold, graphene; italic, BP; bold–italics, MoS₂. It should be noted that the below statistics are incomplete, just representative results. *means that the encapsulated hBN is also a tunnel barrier