Fig. 5.

a CV curves of planar solid-state SC at different scan rates, b CD curves of the planar device at different current densities, c cycle stabilities of the device at 5 A g⁻¹, d photographs of the compact and flexible SC, with a thickness of 141 μm, e capacitance retention at different bending angles, and f Ragone plots of our SC device and its comparison with other devices: Cr₂O₃/GO/PANI [52], PANI NFs/FrGO [53], RGO/CuO/PANI [54], CNT/PANI [55], CNF/PANI [56], HPC/PANI [57], PANI/MWCNT [58], RGO/MnO₂@PANI [59], grapheme//MGC [60], activated carbon//MnO₂ [61], MnO-RGO//FC [62], and activated carbon//NaMnO₂ [63]