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. 2020 Jul 31;12:156. doi: 10.1007/s40820-020-00494-2

Fig. 6.

Fig. 6

a, b PL and TRPL spectra of CsPbI2Br films fabricated using RT and hot casting [88]. Copyright © 2019 The Royal Society of Chemistry. c Trap density of states for the device with 1-h and 48-h aged perovskite precursors [46]. Copyright © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. d Voc as a function of illumination light intensity for a large-grain device (180 °C) and a small-grain device (100 °C) [19]. Copyright © 2017 American Association for the Advancement of Science. e JV characteristics of PSCs swept from 1.0 to − 1.0 V in the dark. f JV characteristics of hole-only devices [53]. Copyright © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim