Fig. 10.
a Photoresponse of the 2D Te-based device as a function of time at a bias voltage of 2 V as the laser is switched on and off. b, c Photoresponse as a function of time while switching the laser on and off, before and after bending the device 100 times, respectively. Adapted with permission from [67]. Copyright 2014, American Chemical Society. d Responsivities of devices fabricated on optical cavities with different Al2O3 thicknesses. e Spectral responsivity of a Te photoconductor at 78 and 297 K under a gate bias of Vd = 5 V. f Specific detectivity of Te photoconductors with optimized thickness. Adapted with permission from [26]. Copyright 2018, American Chemical Society. g, h Photocurrent and photoresponse as a function of incident power Pλ for a range of wavelengths. Adapted with permission from [75]. Copyright 2018, Wiley. i Calculated NEP of the detector as a function of the 2D Te thickness and device length. Adapted with permission from [137]. Copyright 2019, American Chemical Society