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. 2020 Apr 21;12:99. doi: 10.1007/s40820-020-00427-z

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© The Author(s) 2020

Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 13 — a, b Effective mobility and subthreshold swing of Te-based (8 nm) FETs. c Drain current and gate voltage (I_d–V_g) measurement of Te-based (8 nm) FETs with a time period of 30 days. d Thickness dependence of the on/off current ratio (red) and effective mobility (blue) for Te-based FETs. e Optical image of Te-based FETs on a Kapton substrate. f, g Electrical properties of the device after 500 bending cycles with a radius of 6 mm. Adapted with permission from [178]. Copyright 2020, Nature publishing Group. (Color figure online)