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. 2020 Apr 21;12:99. doi: 10.1007/s40820-020-00427-z

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© The Author(s) 2020

Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 16 — a Schematic of the thermoelectric device using 2D Te. b Laser-induced thermoelectric current mapping of the device. c Band diagrams of the depletion-type device due to the combined photoelectric and thermoelectric effects. Adapted with permission from [202]. Copyright 2019, American Chemical Society. d Power conversion efficiency of 2D Te/TMDCs heterojunction solar cells as a function of the conduction band offset and the donor bandgap. Adapted with permission from [209]. Copyright 2019, The Royal Society of Chemistry. e Absorption coefficients of monolayer HfTeSe₄ compared to MoS₂ and InSe. f Carrier recombination lifetime under different biaxial strains. g Photocurrents of monolayer HfTeSe₄ as a function of photon energy along the x- and y-direction. h Power conversion efficiency of the HfTeSe₄/Bi₂WO₆ heterostructure-based solar cell with and without a 2% tensile strain. Adapted with permission from [210]. Copyright 2019, American Chemical Society