Table 3.
The performances of 2D-heterostructure-based photodetectors
| Heterostructures | Response spectrum | Responsivity | Detectivity (Jones) | Conditions | EQE | References |
|---|---|---|---|---|---|---|
| MoS2–GaTe | – | 21.83 A W−1 | 8.4 × 1013 | Vg = 70 V | 61.68% | [106] |
| MoS2/Gra/WSe2 | 400–2400 nm | 104 A W−1 (Vis) |
1011 (NIR) 1014 (Vis) |
Vds = 1 V, Vg = 0 V Pin = 10−10 W |
106% | [107] |
| Gra/MoS2 | – | 5 × 108 A W−1 (300 K) | – | Vds = 0.1 V, Vg = − 50 V | – | [108] |
| BP/MoS2 | – | 2.17 A W−1 | – | Vbias = 0 V | – | [109] |
| MoS2–WS2 planar HS | – | 4.36 mA W−1 | 4.36 × 1013 | Vbias = 0 V | 1.02% | [104] |
| Polydiacetylene/Gra | UV to visible light | 556 A W−1 | 6 × 1011 | Vds = 1 V, Vg = 0 V | – | [110] |
| Gra/WTe2 | – | 8.7 A W−1 | – | Vds = 0.5 V | 165% | [111] |
| WS2/MoS2 | – | 1173 A W−1 | 4.1 × 1011 | Vds = 10 V, Vg = 0 V | – | [42] |
| InSe–Gra | 400–1000 nm | 60 A W−1 | 2.5 × 1012 | Vds = 10 V, Vg = 0 V | 14,850% | [95] |
| Gra/p-GaSe/n-InSe/Gra | 270–920 nm | 350 A W−1 | 3.7 × 1012 | Vds = 2 V, Vg = 0 V | – | [100] |