Table 2.
Summary of the comparison on the different preparation method and process, thickness, characteristics, and application of few-layer BP
Techniques | Classification | Methods | Solvent | BP thickness | Lateral control | Characteristics | Applications | References |
---|---|---|---|---|---|---|---|---|
Top-down | ||||||||
Mechanical exfoliation | Top-down | Sticky-tape | < 7.5 nm | Lack of control | High carrier mobility with low production yield limit | FET | [80–94] | |
Sonication liquid exfoliation | Top-down | NMP | 3–5 Layers | Lack of control | High yield | Semiconductor device | [95–121] | |
DMF & DMSO | 5–20 nm | Highly crystalline | Electronic device | |||||
CHP | 8–11 Layers | Stable | Ultrafast saturable absorbers, gas sensors | |||||
Thermal thinning | Top-down | Controllable | Potential for massive fabrication due to low cost | [18] | ||||
Bottom-up | ||||||||
Chemical vapor deposition | Bottom-up | CVD | 4 Layers | Controllable | Numerous defects introduced Large area potential for massive production | FET | [122–128] | |
Pulsed laser deposition | Bottom-up | Controllable | Flexible size with limited carrier mobility due to disordered structure | [129] | ||||
Phase transition and solvothermal reaction | Bottom-up |
Mineralizer assisted (phase transition) Sublimation induced (solvothermal) |
Ethanol (solvothermal) | < 5 nm (solvothermal) | Lack of control |
High on/off ratios (phase transition) Holey morphology (solvothermal) |
Optoelectronic device (phase transition) Batteries (solvothermal) |
[130–136, 147] |