Table 3.
Summary of the reported NO2 sensor based on the MoS2
| Sensing film | Type | Method | Def. | Electrodes | Device | Conc. (ppm) | Tem. (°C) | S (%) | Res time | Rec time | References |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 1L MoS2 | n | M.E. | Ti/Au | FET | 2 | RT | 80 | – | – | [34] | |
| MoS2 sheets | p | E.L. | rGO | TFT | 1.2 | RT | 7 | – | – | [42] | |
| 5L MoS2 | n | M.E. | Ti/Au | FET | 1000 | RT | 1372 | 300 | 600 | [17] | |
| 1L MoS2 | n | CVD | Ti/Au | FET | .02 | RT | > 20 | 300 | – | [36] | |
| 3L MoS2 | p | CVD | Al | Resistor | 10 | RT | 80 | – | – | [303] | |
| 2L MoS2 | p | CVD | Ag | Resistor | 10 | RT | 98 | – | – | [303] | |
| 4L MoS2 | p | CVD | Au | Resistor | 10 | RT | 60 | – | – | [303] | |
| Atomic layered MoS2 | n | CVD | Ag | Resistor | 50 | RT | ~ 120 | – | – | [32] | |
| Atomic layered MoS2 | n | CVD | Ag | Resistor | 50 | 100 | > 40 | – | – | [32] | |
| Few layer MoS2 | p | L.E. | Pt | Resistor | 1 | 200 | 1.15 | 660 | 720 | [31] | |
| Few layer MoS2 | n | L.E. | Pt | Resistor | 1 | 200 | 5.80 | 2460 | 2340 | [31] | |
| Vertical MoS2 | p | CVD | Ti/Au | Resistor | 100 | RT | > 10 | – | – | [35] | |
| Vertical MoS2 | n | CVD | Au/Cr | Resistor | 50 | RT | 48.32 | 98 | – | [304] | |
| Vertical MoS2 | n | CVD | Au/Cr | Resistor | 50 | RT | 24.26 | 34 | 132 | [304] | |
| 2L MoS2 | p | CVD | Au | Resistor | 1 | RT | 2.6 | 678 | 318 | [305] | |
| Mixed MoS2 | p | CVD | Au/Cr | Resistor | 10 | RT | 10.36 | 8.51 | – | [120] | |
| Mixed MoS2 | p | CVD | Au/Cr | Resistor | 10 | 125 | 7.79 | 4.44 | 19.6 | [120] | |
| MoS2 NWs | n | CVD | Au | Resistor | 5 | 60 | 18.1 | 16 | 172 | [214] | |
| MoS2 nanoflower | p | Hyd. | Au | Resistor | 50 | 150 | 78 | – | – | [33] | |
| MoS2 nanosphere/CTAB | n | Hyd. | Ag/Pd | Resistor | 50 | 150 | 60 | 15 | 12 | [306] | |
| MoS2 hollow microsphere | p | Hyd. | Au/Cr | Resistor | 100 | 150 | 40.3 | 79 | 225 | [307] | |
| MoS2 Nanoflowers | p | Hyd. | Pt | Resistor | 5 | RT | 67.4 | 125 | 485 | [308] | |
| MoS2 Nanoflowers | p | Hyd. | Pt | Resistor | 5 | 150 | 22 | 95 | 320 | [308] | |
| MoS2 Aerogel | p | T.D. | Pt/Ti | Resistor | 0.5 | 200 | 11 | 33 | 107 | [24] | |
| MoS2 Nanosheets | p | M.E. | Ag/Pd | Resistor | 100 | RT | 29 | 42 | 2 | [309] | |
| MoS2-W | n | Hyd. | Ag/Pd | Resistor | 20 | RT | 171 | 41 | 39 | [121] | |
| MoS2-Au | p | S.P. | Au | Resistor | 2.5 | RT | 30 | 240 | 840 | [121] | |
| rGO/Sv-MoS2 | p | CVD | Au | Resistor | 50 | 50 | 72 | 56 | 328 | [310] | |
| MoS2 | n | CVD | Au | Resistor | 50 | 50 | 27 | 142 | – | [310] | |
| Multi MoS2 | n | CVD | Au/Cr | Resistor | 100 | RT | 27.92 | 249 | – | [119] | |
| Multi MoS2 | n | CVD | Au/Cr | Resistor | 100 | 100 | 21.56 | 71 | 310 | [119] | |
| MoS2-Au NPs | p | Redox | Au | Resistor | 2.5 | RT | 30 | 240 | 840 | [121] |
Mechanical exfoliation (M.E.); liquid exfoliation (L.E.); electrochemical lithiation (E.L.); hydrothermal (Hyd.); thermal decomposition (T.D.); solution processed (S.P.)