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. 2021 Jan 4;12:21. doi: 10.1038/s41467-020-20209-w

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Schematic diagrams of energy band model at grain boundary (GB) of polycrystalline semiconductor with a bias voltage. b Schematic illustration of OFET and molecular structure of DNTT and CYTOP. c OFET transfer curves during the two cycle tests. V_ds = −60 V. d Bias stress curve of the OFET. V_gs = 0 V, and V_ds = −60 V. The data in (c, d) denote the excellent operational stability of DNTT OFET.