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. 2021 Jan 8;12:181. doi: 10.1038/s41467-020-20424-5

Fig. 1. Two-qubit metal-oxide-semiconductor device.

Fig. 1

a Scanning electron micrograph of a device similar to the one used in the experiment, with labels describing the function of the aluminum gates on the surface. b Schematic cross section of the device, depicting a pair of donors  ≈10 nm beneath a thin SiO2 dielectric, inside an isotopically enriched 28Si epilayer.