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. 2020 Dec 25;21(1):87. doi: 10.3390/s21010087

Table 7.

Tip displacement when the second layer is SiO2 and the substrate grounded.

Test b1 (µm) b2 (µm) b3 (µm) b4 (µm) Proposed (nm) FEM (nm) Error (%)
#1 70 70 70 70 47.61 46.07 3.34
#6 70 60 50 10 8.04 8.54 5.85