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. 2021 Jan 13;12:361. doi: 10.1038/s41467-020-20582-6

Fig. 1. Device fabrication and characteristics.

Fig. 1

a An illustration of the VAC-treatment. b Schematic of the PeLED structure and the HAADF cross-sectional device image. The scale bar is 100 nm. c Histograms of peak EQEs extracted from control (top) and VAC-treated devices (bottom) with varying chloride contents (30%, 35% and 40%). df Spectral stability for control and VAC-treated devices with 40% Cl loading. The representative plots of CIEy versus applied voltages (top) and current densities (bottom) (d); EL spectra at low and high voltage/current density for control (left) and VAC-treated devices (right) (e); EL spectra of VAC-treated devices with varying chloride content (30–57%) at maximum luminance (f). The points labelled as Lmax in (d) represent the operational condition for peak luminance.