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. 2021 Jan 22;12:543. doi: 10.1038/s41467-020-20721-z

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a Detector responsivity, R_v, as a function of V_tg for V_bg = 0 V (black), V_bg = −1.4 V (blue) and V_bg = 1.5 V (red) measured in response to f = 0.13 THz radiation. T = 10 K. Inset illustrates band profiles in the vicinity of the single and dual-gated interface when V_bg and V_tg are of opposite polarities. Green arrows illustrate interband tunnelling. b, c Normalized transconductance F versus V_tg obtained by numerical differentiation of the device resistance for V_bg = 0 V (b) and V_bg = 1.5 V (c). Note, F(V_tg) dependencies are fairly symmetric whereas the R_v(V_tg) is highly asymmetric for the same V_bg (a). d, e R_v from a normalized to the channel resistance r_2pt as a function of V_tg for given V_bg.