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. 2021 Jan 22;12:543. doi: 10.1038/s41467-020-20721-z

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Responsivity of our detector as a function of V_bg and V_tg recorded in response to f = 0.13 THz radiation. The black lines demark the (V_tg, V_tg) regions where the tunnel junction configuration is realized. b r_2pt(V_tg, V_tg) map measured at T = 10 K. The appearance of highly resistive regions (red) points out to the band gap opening in BLG. c NEP of our detector at given V_bg determined using the Johnson–Nyquist relation for the noise spectral density. Horizontal line marks NEP level for SHEBs operating at the same f and T = 4.2 K (see Supplementary Note 3 for a detailed comparison of the BLG-TFET with other THz detectors). Green shaded region indicates the spread in NEP for SHEBs at higher f. d Temperature dependence of R_v(V_tg) and r_2pt(V_tg) (inset) at V_bg = 1.5 V.