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. 2020 Dec 27;11(1):45. doi: 10.3390/nano11010045

Figure 2.

Figure 2

(a) Band bending at the interface of insulator/semiconductor in a classic metal-oxide-semiconductor (MOS) structure. (b) Valence band profile with formation of hole transport channel around the surface of NP which leads to the increased radiative recombination rate in perovskite.