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. 2020 Dec 31;12(1):39. doi: 10.3390/mi12010039
Xj Junction depth
Vsat Saturation velocity
U0 Mobility
Nch Doping concentration near channel interface
Vth0 Threshold voltage
A0 Bulk charge coefficient
A2 Second non-saturation factor
Cpd Parasitic capacitance at drain contact
Cps Parasitic capacitance at source contact
Rsol Resistance of electrolyte
tox Oxide thickness
Cox Oxide capacitance
Aox Gate-oxide interface area
εox Permittivity of oxide
gm Transconductance parameter
Cfb Feedback capacitance
Rfb Feedback resistance
Cbio Capacitance due to biomolecules
Rbio Resistance due to biomolecules
tbio Thickness of biomolecular layer
κbio Relative permittivity of biomolecules
εbio Permittivity of biomolecules
γ Capacitance per unit area of biomolecules
λ Resistance per unit area of biomolecules
A Area of contact with source or drain
d Thickness of passivation layer