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. 2020 Dec 31;11(1):75. doi: 10.3390/nano11010075

Figure 4.

Figure 4

SEM images of GaN samples after: (a) orthodox etching at 420 °C for 10 min, (b,c) galvanic photo-etching for 8 and 12 min, respectively, (d) electroless photoetching for 120 min. (a’d’) shows SEM images of similar samples after sputtering of an Au-Ag alloy. The samples are tilted 45°. The scale bars represent 1 μm. Reprinted with permission from [37]. Copyright 2018 Elsevier.