Table 4.
State-of-the-art actuation and sensing mechanisms for MEMS-based sensor devices (N.M not mentioned)
| MEMS device | Dennis et al., 2015 [44] | Dennis et al., 2016 [83] | Almur et al., 2017 [104] | Barba et al., 2018 [111] | Mahdavi et al., 2018 [117] | Jiushuai et al., 2019 [112] | Huang et al., 2019 [136] | Zope et al., 2020 [138] |
|---|---|---|---|---|---|---|---|---|
| Actuation mechanism | Electrothermal | Electrostatic | Electrothermal | Electromagnetic | Piezoelectric | Electromam gnetic and piezoelectric | N.M | Thermal |
| Sensing mechanism | Piezoresistive (PZR) | Capacitive | Capacitive | N.M | Thin-film piezoelectric-on-silicon | Piezoresistive | Optical | Piezoresistive |
| Resonance frequency | 2–20 Hz | 100–100 kHz | 0.5–8 kHz | 6.5 kHz | 18–20 kHz | 18–20 kHz | 562.85 Hz | 5.13 MHz |
| Sensitive material | Titanium dioxide (TiO2) nanoparticles | Chitosan | Chitosan/polyethylene glycol (PEG) polymers | Boron-doped silicon | ZnO NRs (6 μm/chitosan SAMs) | ZnO NRs (6 μm/chitosan SAMs) | Silicon | Silicon dioxide (SiO2) |
| Sensitivity | 0.102 mV/% RH to 0.501 mV/% RH | 0.042, 0.066, 0.13, 0.18, 0.26 pm/ppm | 0.65 mV/ppm | N.M | 16.9–83.3 ppm (30–80%RH, 25 C) | 16.9–83.3 ppm (30–80%RH, 25 C) | 781.64 nm/g | 24.96 kHz/ng |
| Response time | N. M | N.M | N.M | N.M | 46 s/ 167 s | 46 s/ 167 s | 1.037 μg | 7.3 μs |
| Fabrication technology | CMOS-MEMS | CMOS-MEMS | MetalMUMPs | SOI | N.M | CMOS-MEMS | Bulk silicon process | CMOS-MEMS |
| Application | Humidity sensing | Screening of diabetes | Acetone vapour sensing | Minimize parasitic phenomena | Dew point meters | Humidity sensing | Inertial navigation | Mass sensing |