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. 2021 Jan 27;153(2):e202012706. doi: 10.1085/jgp.202012706

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© 2021 Catacuzzeno et al.

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Figure 7. — Mechanisms at the base of the change in the kinetics of the gating current induced by the I287T mutation. Bottom: Plot showing the electrostatic energy associated with the S4 segment, assessed as $G_{e l} = \int^{} Z_{S 4} e_{0} \frac{d V (x)}{d x} d x,$ as a function of the S4 segment position, for the two models of voltage-dependent gating differing by the dielectric constant in the WA region of the gating pore. Top: Schematic drawing showing that the change in the electrostatic energy exclusively at the first peak may be explained by the addition of the first gating charge to the WA region of the gating pore.