Fig. 4. Magnetotransport data and anomalously large SOC parameter.

(A and B) dR_xx/dn(n, E_⊥) and simulations at constant B = 10 T for device D1. (C) Extracted Rashba parameter and its dependence on E_⊥ for different devices. (D) DFT calculations of Rashba parameter versus E_{⊥, s} for different c-axis lattice constants. Here, E_{⊥, s} is the out-of-plane electric field used in calculations, which, due to screening, is substantially reduced from the experimental values calculated from external gate voltages.