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. 2021 Jan 29;12:693. doi: 10.1038/s41467-020-20732-w

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — Histograms showing the variation in threshold voltage extracted using linear extrapolation (V_t,lin) for a MoS₂ and b WS₂ FETs. The median values for these extracted threshold voltages were found to be more positive for WS₂ FETs compared to MoS₂ FETs due to higher intrinsic n-type doping of MoS₂. Histograms of SS extracted across 4 orders of magnitude change in the drain current (SS₄) for c MoS₂ and d WS₂ FETs. The deviation of SS from the ideal 60 mV.dec⁻¹ corresponds to the presence of interface traps. Histograms of interface trap density (D_IT) for e MoS₂ and f WS₂ FETs calculated from SS₄. Histograms of maximum to minimum current ratio (I_max/I_min) for g MoS₂ and h WS₂ FETs.