Figure - PMC

Skip to main content

An official website of the United States government

Here's how you know

Here's how you know

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

View full-text article in PMC

. 2021 Jan 29;12:693. doi: 10.1038/s41467-020-20732-w

Search in PMC
Search in PubMed
View in NLM Catalog
Add to search

© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

PMC Copyright notice

Fig. 7 — Median of drive current (I_ON) as a function of 1/L_CH for a MoS₂ and b WS₂ FETs at V_DS of 1 V corresponding to the linear region of the FETs, and c MoS₂ and d WS₂ FETs at V_DS of 5 V corresponding to the saturation region of the FETs. These are extracted at carrier concentrations (n_S) of 1 × 10¹³ cm⁻² and 4.4 × 10¹² cm⁻² for MoS₂ and WS₂, respectively. The saturation current (I_DS,SAT) for e MoS₂ and f WS₂, extracted from their corresponding shorter-channel devices (L_CH < 1 μm) as a function of n_S. The slope indicates the saturation velocity (v_SAT). The distribution of v_SAT for g MoS₂ and h WS₂ shorter-channel FETs.