Table 2.

Benchmarking median subthreshold slope for L_CH = 100 nm.

	SS (mV.dec−1)	EOT (nm)	Gate dielectric	DIT (1012 eV−1 cm−2)	SSS (mV.dec−1) at SEOT = 0.9 nm
7—MoS2	80	1.9	4 nm HfO2	3.7 × 1012	70
7—MoS2	160	2.7	8 nm HfO2	1.3 × 1013	93
7—MoS2	200	3.8	12 nm HfO2	1.3 × 1013	93
7—MoS2	1350	50	50 nm SiO2	9.2 × 1012	83
Our work-MoS2	450	22	50 nm Al2O3	6.3 × 1012	76
Our Work-WS2	550	22	50 nm Al2O3	8 × 1012	80
36—UTB SOI	80	4	4 nm SiO2	1.8 × 1012	64