Table 3.

Benchmarking ON-state performance at V_DS = 1 V (best values are compared with median/mean values shown within parentheses).

	μ(cm2 V−1 s−1)	Rc(kΩ−μm)	ION(μA.μm−1)	nS(cm−2)
25—MoS2	${\mu }_{g_{\mathrm{m}}}$ = 42 (34.2)	0.73 (1)	22, LCH = 5.4 μm	1.3 × 1013
22—MoS2	μTLM = 20	6.5	270, LCH = 80 nm	1 × 1013
12—MoS2	${\mu }_{g_{\mathrm{m}}}$ = 80 (≈40)	2.4	13, LCH  = 4 μm	6.6 × 1012
65—MoS2	μTLM  = 30	1.7	260, LCH = 10 nm	4.7 × 1013
7—MoS2	μTLM = 15	1	250, LCH = 29 nm	1.5 × 1013
26—MoS2	μ4-point ≈ 75 (70)	14	–	–
Our work-MoS2	μTLM = 47 (27)	3(9.2)	73 (54), LCH = 100 nm	1 × 1013
64—WS2	${\mu }_{g_{\mathrm{m}}}$ = 11	–	25, LCH = 4 μm	2.1 × 1013
47—WS2	${\mu }_{g_{\mathrm{m}}}$ = 20.4	–	0.6, LCH = 1 μm	2.5 × 1012
50—WS2	${\mu }_{g_{\mathrm{m}}}$ = 5	–	≈0.05, LCH = 10 μm	≈7.2 × 1012
50—WS2 (Graphene contact)	${\mu }_{g_{\mathrm{m}}}$ = 50 (27)	–	≈1.1, LCH = 10 μm	≈7.2 × 1012
Our work-WS2	μTLM = 33 (16)	2.1 (29)	26 (17), LCH = 100 nm	4.4 × 1012
51—UTB SOI	μ4-point = 6	–	≈35 * 10−3, LCH = 100 μm	≈9 × 1012