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. 2021 Feb 5;12:809. doi: 10.1038/s41467-021-21072-z

Fig. 4. Magneto-transport and RMCD measurements of 1T-CrTe2 single crystals.

Fig. 4

a, b Out-of-plane Hall resistance hysteresis loops and magneto-resistance measured on the 10.0 nm thick 1T-CrTe2 device. Inset: OM image of the corresponding Hall device. c, d Hall resistance at various temperatures obtained in 1T-CrTe2 single crystals with a thickness of 15.0 and 130.0 nm, respectively. The corresponding MR are shown in Supplementary Fig. 15. e, f RMCD signal as a function of the out-of-plane magnetic field at different temperatures obtained in 1T-CrTe2 domains with a thickness of 7.6 and 19.0 nm, respectively. g The trend of Tc as a function of the layer number (and thickness) of 1T-CrTe2. To minimize the effect of domain rotation and magnetic anisotropy, Tc is determined from the Arrott plot (Supplementary Fig. 16). For RMCD, Tc was extracted from the plots of temperature-dependent remanence of RMCD signal at zero field (Supplementary Fig. 18)40. Tc values determined from RMCD and Arrott plots are presented in blue and orange, respectively. h The DFT-calculated density of states (DOS) for monolayer and bulk 1T-CrTe2, respectively. The on-site Coulomb potential U is 4 eV. The calculated Fermi levels are set to zero and highlighted by the green dotted line.