Figure 3.

The in-depth exploration about the mechanism based on Fermi level height and molecule polarization. (a) The band structure schematic and carrier kinetics of the static semiconductor-liquid-semiconductor generator during the contact state. (b) The band structure schematic and carrier kinetics of the dynamic semiconductor-liquid-semiconductor generator during the sliding state. (c) The relationship between the output voltage and the Fermi level difference between N-Si substrates (with different resistivity of 0.001, 0.01, 0.5, 5, 50, 1000, and 10000 Ω·cm) and P-Si substrates (with constant resistivity of 0.001 Ω·cm). (d) The output voltage of the dynamic semiconductor-liquid-semiconductor generator under different polar liquid including water, C₂H₅OH, (CH₂OH)₂, and nonpolar liquid C₆H₁₄.