Table 4.
Phosphor‐converted LEDs from lead‐free halide perovskites
| Emitting material | Device structure | CCT [K] | CIE coordinates | CRI | Stability | Refs. |
|---|---|---|---|---|---|---|
| Cs2SnCl6:2.75%Bi3+ | Cs2SnCl6:2.75%Bi3+/ Ba2Sr2SiO4:Eu2+/ GaAlSiN3:Eu2+/365 nm chip (silicone) | 4486 | (0.36, 0.37) | N/A | N/A | [ 16e ] |
| Cs2Ag0.6Na0.4InCl6:0.04Bi3+ | Cs2Ag0.6Na0.4InCl6:0.04Bi3+/ultraviolet chip | 4054 | (0.396, 0.448) | N/A | ≈100% (1000 h working on LED) | [ 60 ] |
| (OCTAm)2SnBr4 | (OCTAm)SnBr4/BaMgAl10O17:Eu2+/G2762/365 nm chip |
5635 6530 |
(0.33, 0.26) (0.33, 0.31) |
81 89 |
N/A | [ 56 ] |
| HMD3SnBr8 | HMD3SnBr8/BaMgAl10O17:Eu2+, Mn2+/ UV chip | 5700 | N/A | 94 | ≈100% (24 h working on LED) | [ 192 ] |
| Cs3Bi2Br9 | Cs3Bi2Br9 NCs with silica composites/Y3Al5O12/GaN chip | 8477.1 | (0.29,0.30) | N/A |
78% (UV 16 h) 68% (60 °C 15 h) |
[ 58 ] |
| Cs2SnCl6 :0.59%Sb3+ | Cs2SnCl6:0.59%Sb3+/ Cs2SnCl6:2.75%Bi3+/ Ba2Sr2SiO4:Eu2+/380 nm chip(TEOS) | 6815 | (0.30, 0.37) | 81 | N/A | [ 187 ] |
| (C4N2H14Br)4SnBr6 | (C4N2H14Br)4SnBr6/ BaMgAl10O17:Eu2+(PDMS)/340 nm chip | 4946 | (0.35, 0.39) | 70 | ≈100% (6 h working on LED) | [ 132 ] |