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. 2021 Feb 1;15(2):3171–3187. doi: 10.1021/acsnano.0c09758

Figure 2.

Figure 2

(a) Schematic representation of PECVD deposition of Si3N4 on SLG without (top, dark cyan arrow) and with (bottom, orange arrows) intermediate 1L-hBN. (b) Typical Raman spectra on SLG SCs after transfer (black) after Si3N4 PECVD, with (orange) and without (dark cyan) 1L-hBN. The same colors are used in the correlation plots d–g. (c) Distribution of I(D)/I(G) from 800 spectra acquired on two SLG SCs, one protected (orange bars), the other exposed (dark cyan bars). Inset: optical micrographs of the two SCs, showing cracked areas in the exposed one. Scale bars 50 μm. (d) Pos(2D) as a function of Pos(G). Solid lines are linear fits of the data. (e) FWHM(2D) as a function of Pos(G). (f) FWHM(G) as a function of Pos(G). (g) A(2D)/A(G) as a function of Pos(G).