Table 1. Raman Fit Parameters from Figure 2d–g and Corresponding Defect Density, EF, and Strain.
| SLG on SiO2 | SLG after Si3N4 deposition with hBN encapsulation | SLG after Si3N4 deposition without hBN encapsulation | |
|---|---|---|---|
| Pos(G) (cm–1) | 1585.5 ± 0.7 | 1590.3 ± 1.5 | 1590 ± 1.6 |
| FWHM(G) (cm–1) | 10.5 ± 1.0 | 11.8 ± 1.7 | 12.0 ± 1.9 |
| Pos(2D) (cm–1) | 2678 ± 1.2 | 2684.6 ± 1.8 | 2679.3 ± 1.8 |
| FWHM(2D) (cm–1) | 26.9 ± 0.8 | 32.5 ± 1.5 | 33.8 ± 2 |
| I(2D)/I(G) | 2.6 ± 0.3 | 2.3 ± 0.3 | 1.8 ± 0.2 |
| A(2D)/A(G) | 6.8 ± 0.6 | 6.5 ± 0.7 | 5.1 ± 0.5 |
| I(D)/I(G) | <0.02 | <0.05 | 0.48 ± 0.06 |
| defect density (1011 cm–2) | <0.05 | <0.10 | 1.98 ± 0.3 |
| EF (meV) | 190 ± 30 | 220 ± 40 | 300 ± 40 |
| uniaxial strain (%) | –0.08 ± 0.08 | 0.06 ± 0.12 | –0.14 ± 0.12 |
| (biaxial strain) (%) | (−0.03 ± 0.03) | (0.02 ± 0.04) | (−0.06 ± 0.05) |