Table 3.
Author; Tear | Wavelength | Type of Emitter | Power (mW) | Energy per Point (J) | Irradiation Time (sec) | Spot Size (cm2) | Energy Density (J/cm2) | Total Energy (J) | PBM Technique | PBM Schedule |
---|---|---|---|---|---|---|---|---|---|---|
1. Sroka et al., 1999 [11] | 410, 488, 630, 635, 640, 805, and 1064 nm | Kr+, Ar+- pumped tunable dye, GaAlAs 1, and Nd:YAG 2 lasers | – | – | – | – | 0–20 | – | – | – |
2. de Castro et al., 2005 [22] | 685 nm 830 nm |
Diode lasers | 31 34.5 |
– | – | 0.8 | 4 | – | – | 2 sessions with 48 intervals |
3. Frigo et al., 2009 [23] | 660 nm | InGaAlAsP 3 | 50 | 3 21 |
60 420 |
0.02 | 150 1050 |
9 63 |
CW 4 | 3 sessions with 24 h intervals |
4. de C Monteiro et al., 2011 [24] | 660 nm | Diode laser | 30 | 4 | 133 | 0.07 | 56.4 | – | CW | Every other day for 4 Weeks |
5. Myakishev-Rempel et al., 2012 [25] | 670 nm | NASA LED 5 | – | – | 312 | – | 2.5 | – | – | 2 sessions daily for 37 days |
6. Schartinger et al., 2012 [26] | 660 nm | GaAlAs | 350 | – | 900 | – | – | – | – | 3 sessions with 24 h intervals |
7. Sperandio et al., 2013 [12] | 660 nm 780 nm |
GaAlAs | 40 | – | – | 0.039 | 2.05 3.07 6.15 (for each) |
– | In contact | One session |
8. Gomes Henriques et al., 2014 [27] | 660 nm | InGaAlP 6 | 30 | 0.48 0.99 |
16 33 |
0.03 | 0.5 1.0 |
– | CW | 2 sessions with 48 h intervals |
9. Ottaviani et al. 2016 [18] | 660 nm 800 nm 970 nm |
GaAs 7 InGaAlAsP |
100 1 W 2.5 W |
– | 60 30 30 |
– | 3 6 6 |
– | CW | In vivo: one session a day for 4 days |
10. Rhee et al., 2016 [28] | 650 nm | Diode laser | – | 0.3 0.6 |
150 300 |
0.02 | 15 30 |
0.3 0.6 |
In contact and CW | One session |
11. Takemoto et al., 2019 [29] | 660 nm | LED | 100 | – | – | – | 3 6 9 12 24 36 |
– | – | 3 times with 24 h intervals |
12. Shirazian et al., 2020 [30] | 660 nm 810 nm |
Diode laser | 40, 80 100, 200 |
– | 30, 15 12, 6 |
0.3 | 4 | – | Non-contact and CW | 4 session with 0, 24, 72, and 168 h intervals |
1 Gallium Aluminium Arsenide (GaAlAs); 2 Neodymium-doped Yttrium Aluminum Garnet (Nd:YAG); 3 Indium–Gallium–Alluminium-Arsenide Phosphide (InGaAlAsP); 4 Continuos Wave (CW); 5 Light-Emitting Diode (LED); 6 Indium–Gallium–Aluminum Phosphide (InGaAlP); 7 Gallium Arsenide (GaAs).