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. 2021 Feb 3;11(2):383. doi: 10.3390/nano11020383

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© 2021 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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(a) Scheme of the Si NWs fabrication by nanosphere lithography coupled with MACE. In particular: (A) nanosphere reduction, (B) lift-off process, and (C) metal-assisted chemical etching. SEM images of the main issues and challenging steps of the process: (b) roughened nanosphere due to the RIE etching, in the inset a single roughened nanosphere is shown with a scale bar of 100 nm; (c) nanosphere shape ruined after excessive RIE, (d) unsuccessfully lift-off of an Au layer, (e) tapered and porous Si NWs by MACE [126]. This figure [126] is reproduced with permission, Copyright 2013, John Wiley and Sons.